IR2103STRPBF SOIC 8N – Infineon Technologies

Gate driver with voltage class 600 V floating high-side operation, source current typical 0.21 A, and sink current typical 0.36 A.

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Key Selection Information

Selection Parameter Confirmed Information
Function High-side and low-side half-bridge gate driver
Voltage class 600 V floating high-side operation
Source current typical 0.21 A
Sink current typical 0.36 A
Gate-drive supply 10 V to 20 V
Logic compatibility 3.3 V, 5 V and 15 V
Package SOIC 8N
Product status Active

Product Overview

The IR2103STRPBF is the exact tape-and-reel OPN for Infineon’s EiceDRIVER IR2103S 600 V half-bridge gate-driver IC. It provides a floating high-side channel and a low-side channel for driving external MOSFETs or IGBTs from logic-level control signals.

The driver uses typical 0.21 A source and 0.36 A sink current and includes undervoltage lockout, cross-conduction prevention and internally set dead time. Its logic inputs are compatible with 3.3 V, 5 V and 15 V systems, while the gate-drive supply operates from 10 V to 20 V.

IR2103STRPBF product view

Technical Specifications

Parameter Confirmed Information
Channels High side + low side
High-side voltage class 600 V
Source current 0.21 A typical
Sink current 0.36 A typical
Gate-drive supply 10 V to 20 V
Input logic compatibility 3.3 V, 5 V, 15 V
High-side supply Bootstrap / floating channel
UVLO Integrated
Cross-conduction prevention Integrated
Dead time Internally set
Package SOIC 8N
Packing 2500 tape and reel
Product status Active

Design Considerations

The modest output-current capability is suitable for many discrete half bridges, but gate charge and target switching time must be checked explicitly. A large MOSFET or IGBT can require more peak drive current than the IR2103 can provide without slowing transitions and increasing switching loss.

Bootstrap operation also imposes duty-cycle and refresh constraints on the high-side supply. Verify that the switching pattern gives the bootstrap capacitor enough recharge time and that the selected capacitor maintains high-side gate voltage through the longest on interval.

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Package

SOIC 8N