IR2104STRPBF – Infineon 600 V Half-Bridge Gate Driver

IR2104STRPBF is an active Infineon 600 V half-bridge gate driver for MOSFET and IGBT stages. It operates from a 10 V to 20 V gate-drive supply and provides a floating high-side channel, undervoltage lockout, cross-conduction prevention, internal deadtime and shutdown control in SOIC-8. The bootstrap network and switching-node transient behavior must be designed around the target power stage.

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Infineon Technologies

Infineon Technologies is a global semiconductor company focused on power systems and IoT technologies. The company’s product and technology scope includes power semiconductors, microcontrollers, sensors, connectivity, security, automotive ICs and power-management solutions. These technologies are used across automotive, industrial, energy, consumer, computing and connected IoT systems, with manufacturer-controlled documentation and product resources supporting engineering selection and design.

For component buyers and engineers, Infineon Technologies is relevant because its portfolio spans distinct device families and package or performance options that should be selected by exact manufacturer part number rather than by a generic family label. Electrical limits, interface requirements, package, qualification, lifecycle and ordering suffixes can vary between related devices, so the exact orderable code remains the primary identity for BOM control and substitution review.

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Key Selection Information

Selection Parameter Confirmed Information
Configuration Half-bridge gate driver
Voltage Class 600 V
Channels 2
Gate-Drive Supply 10 V to 20 V
Output Current 0.21 A source / 0.36 A sink typical
Protection / Logic UVLO, cross-conduction prevention, internal deadtime, shutdown
Package SOIC-8
Manufacturer Status Active

Product Overview

IR2104STRPBF is the tape-and-reel SOIC-8 ordering code for Infineon’s IR2104S 600 V half-bridge gate-driver family. It provides a level-shifted floating high-side channel and a low-side channel for driving N-channel MOSFET or IGBT half bridges from a 10 V to 20 V gate-drive supply.

The driver includes undervoltage lockout, cross-conduction prevention, internally set deadtime and a shutdown input. These functions reduce external logic requirements, but the device is still part of a bootstrap-based power stage: bootstrap capacitor sizing, diode choice, switching-node transients and power-device gate charge determine whether the final gate-drive waveform is acceptable.

IR2104STRPBF product view

Technical Specifications

Group Parameter Value / Condition
Driver Configuration Half bridge
Driver Channels 2
High side Voltage class 600 V
Supply VCC 10 V to 20 V
Output Source current 0.21 A typical
Output Sink current 0.36 A typical
Timing Turn-on propagation delay 680 ns typical
Timing Turn-off propagation delay 150 ns typical
Logic Compatibility 3.3 V, 5 V and 15 V logic compatible
Protection Functions UVLO, cross-conduction prevention, shutdown
Package Type SOIC 8N
Packing Exact OPN Tape and reel

Product Status

Item Information
Manufacturer Status / Lifecycle Active

Infineon currently lists IR2104STRPBF as the active/recommended tape-and-reel SOIC-8 OPN within the IR2104S product family.

Functional Highlights

600 V level shifting enables high-side N-channel drive

The floating channel can operate with the switching node moving over a high common-mode range, allowing a bootstrap-supplied high-side gate in half-bridge topologies.

Internal interlock features simplify control logic

Cross-conduction prevention, deadtime and shutdown reduce the amount of external glue logic required around the driver, while still requiring system-level validation of timing and fault behavior.

Applications / Application Fit

  • Half-bridge MOSFET or IGBT power stages
  • Motor-control and power-conversion gate drive
  • Inverter and photovoltaic switching stages where a bootstrap high-side architecture is appropriate

Design Considerations

Size the bootstrap capacitor for the actual MOSFET/IGBT gate charge, leakage and maximum high-side on-time.

Keep the gate-drive and switching loops short; high dV/dt at the switch node can couple into logic and gate paths.

Confirm propagation delay and internal deadtime against the switching frequency and required shoot-through margin.

No customer PDF download is published for this test because the official family PDF did not explicitly contain the full exact OPN IR2104STRPBF under the current strict PDF identity rule.

Related Engineering Resources

Alternative Candidates for Engineering Evaluation

MPN Manufacturer Package
IR2103STRPBF Infineon Technologies SOIC-8
IR25602STRPBF Infineon Technologies SOIC-8
IR2101STRPBF Infineon Technologies SOIC-8
IR2102STRPBF Infineon Technologies SOIC-8
U2104M UNI-SEMIC SOP-8

Candidate alternative parts require engineering verification before substitution. Electrical characteristics, pinout, package, qualification, and application requirements should be verified before use.

Quality & Verification Support

Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. After an order is placed, physical product, label, packaging, and Date Code photos may be provided where appropriate.

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To request a quotation, provide the manufacturer part number, required quantity, destination, target Date Code if applicable, and any testing or inspection requirements.

Package

SOIC-8