Device Overview
Infineon Technologies 1ED020I12FA2 is a galvanically isolated single-channel IGBT gate driver using coreless-transformer isolation. Its key selection points are isolation architecture, 1200 V device class, gate-drive current capability and PG-DSO-20 package.
Selection-Critical Data
| Parameter | Confirmed Data | Engineering Relevance |
|---|---|---|
| Driver function | Galvanically isolated single-channel IGBT gate driver | Defines the required power-switch drive architecture. |
| Voltage class | 1200 V | Must suit the intended high-voltage power stage. |
| Isolation | Coreless-transformer functional galvanic isolation | Maintains the required electrical separation between control and power-side domains. |
| Gate-drive current | 2.1 A source / 2.1 A sink maximum | Affects achievable gate charging and discharging capability. |
| Input VCC maximum | 20 V maximum | Must not be exceeded by the driver-side supply rail. |
| Package | PG-DSO-20 | Defines pinout, footprint and isolation-related mechanical integration. |
Procurement Note
Infineon currently marks 1ED020I12FA2 as not for new design. Existing-design sourcing can still be evaluated, but new designs should account for this lifecycle status.
