Device Overview
IRF3205PBF is Infineon’s active 55 V single N-channel power MOSFET in a through-hole TO-220 package. It is a conventional high-current device intended to be driven strongly at the gate and thermally coupled to a suitable PCB/heatsink arrangement.
Key Selection Information
| Parameter | Verified Information |
|---|---|
| Manufacturer | Infineon Technologies |
| Exact OPN | IRF3205PBF |
| Drain-source voltage | 55 V maximum |
| Continuous drain current | 110 A maximum at TC = 25 °C; 80 A at TC = 100 °C under the datasheet conditions |
| RDS(on) | 8 mΩ maximum at VGS = 10 V and ID = 62 A |
| Total gate charge | 97.3 nC typical at 10 V gate drive |
| Gate-drain charge | 36 nC |
| Gate threshold voltage | 2 V to 4 V range; this is not a recommended full-enhancement drive voltage |
| Maximum gate-source voltage | ±20 V |
| Maximum junction temperature | 175 °C |
| Thermal resistance junction-to-case | 1 K/W maximum |
| Package | TO-220, through-hole |
| Manufacturer lifecycle | Active |
Engineering Selection Notes
The 110 A headline is a case-temperature rating at TC = 25 °C, not a free-air PCB current rating. Lead current density, package mounting, heatsink performance and junction-temperature rise normally set a much lower practical continuous current.
The 8 mΩ RDS(on) value is guaranteed at VGS = 10 V and ID = 62 A. A 5 V or 3.3 V gate-drive system should not assume that same on-resistance because IRF3205PBF is not characterized as a low-voltage logic-drive MOSFET.
The 55 V VDS rating can be tight in nominal 24 V and higher-energy switching systems if wiring inductance creates overshoot. Drain ringing, avalanche stress and clamping strategy should be verified together with conduction loss.
Official Engineering Resources
Quality & Verification Support
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