Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Device type | Single N-channel power MOSFET |
| Technology | StrongIRFET 2 |
| VDS maximum | 100 V |
| ID maximum at 25°C | 315 A |
| RDS(on) maximum at 10 V | 1.5 mΩ |
| Typical gate charge at 10 V | 161 nC |
| Package | PG-HSOF-8 / TOLL |
| Product status | Active and preferred |
Product Overview
The IPT015N10NF2SATMA1 is the exact tape-and-reel OPN for Infineon’s StrongIRFET 2 100 V N-channel power MOSFET in the TOLL package. It targets very high-current low-voltage power stages where conduction loss and package current capability are primary selection constraints.
Infineon specifies a maximum 1.5 mΩ RDS(on) at 10 V gate drive, 315 A maximum drain current at 25°C and a 1260 A pulsed-current rating. Those headline current values are device limits rather than board-level guarantees; the TOLL thermal interface, copper area, busbar connection and switching duty determine usable continuous current in a finished converter.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Polarity | N-channel |
| VDS maximum | 100 V |
| ID maximum at 25°C | 315 A |
| Pulsed drain current | 1260 A |
| RDS(on) maximum at VGS = 10 V | 1.5 mΩ |
| Typical total gate charge | 161 nC |
| Power dissipation maximum | 300 W |
| VGS(th) range | 2.2 V to 3.8 V |
| Typical VGS(th) | 3 V |
| Operating temperature | -55°C to +175°C |
| Package | PG-HSOF-8 / TOLL |
| Battery-voltage application class | 48 V to 72 V |
| Product status | Active and preferred |
Design Considerations
The low RDS(on) reduces conduction loss, but 161 nC gate charge makes gate-drive strength and switching frequency important. At high frequency, the driver must charge and discharge the gate fast enough to control switching loss without creating excessive dv/dt, ringing or EMI.
The 100 V rating also needs adequate transient margin in 48–72 V systems. Drain overshoot from package/PCB inductance can consume that margin quickly at hundreds of amperes, so snubbing, decoupling and current-loop layout should be evaluated from measured switching waveforms.
Related Engineering Resources
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