Procurement Snapshot
| Procurement Field | Value |
|---|---|
| Exact MPN | GS66502BMRXUSA1 |
| Manufacturer | Infineon Technologies |
| Package | SMD |
| Availability | Request current stock and lead time by RFQ |
| Datasheet | Verified PDF |
Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Current – Continuous Drain(Id) | 7.5A |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Package | SMD |
| Output Capacitance(Coss) | 17pF |
| Technology | E-mode |
Product Overview
GS66502BMRXUSA1 is a 650V 7.5A 1.7V 200mΩ 1 N-channel N-Channel SMD Single FETs, MOSFETs from Infineon Technologies. The exact manufacturer order code is preserved for BOM, RFQ and incoming-inspection control. The verified package is SMD, and the verified functional category is MOSFETs. Confirmed selection data for this exact listing includes Drain to Source Voltage 650V, Gate Threshold Voltage (Vgs(th)) 1.7V, Current – Continuous Drain(Id) 7.5A, Operating Temperature -55℃~+150℃.
Alternative Candidates
| MPN | Manufacturer | Package |
|---|---|---|
| GS66504BMRXUSA1 | Infineon | SMD |
| GS66504B-TR | Infineon | SMD |
| GS66508T-MR | Infineon | SMD |
| GS66508B-TR | Infineon | SMD |
These candidates are listed by LCSC. Verify electrical characteristics, pinout, package, qualification and application requirements before substitution.
Quality & RFQ Support
For quotation or inspection requirements, provide the exact MPN, quantity, destination, target Date Code if applicable, and any requested third-party testing before shipment.
