Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Offset Voltage | 50 µV maximum |
| Input Noise | 7 nV/√Hz |
| Bandwidth | 2 MHz at G=1; 260 kHz at G=100 |
| Gain Range | 1 V/V to 1000 V/V |
| Gain Drift | 5 ppm/°C at G=1; 50 ppm/°C at G>1 |
| Supply | 4.5 V to 36 V or ±2.25 V to ±18 V |
| Protection / CMRR | ±40 V input protection; 110 dB minimum CMRR at G=10 |
| Exact Package / Packing | SOIC (D), 8 pins; 2500-piece large tape and reel |
Product Overview
INA828IDR is a second-generation precision instrumentation amplifier in the traditional SOIC-8 format. It combines 50 µV maximum offset, 7 nV/√Hz noise and 2 MHz G=1 bandwidth with a wide 4.5 V to 36 V supply range.
Compared with INA821, INA828 is somewhat slower and has a 50 µV rather than 35 µV maximum offset, but both target low-noise, wide-supply precision acquisition. INA828 is most useful where its established SOIC-only implementation and gain/noise profile fit an existing industrial analog platform.
Gain is set from 1 to 1000 with a single external resistor. Precision at high gain depends not only on the IC but also on RG temperature coefficient, board strain, thermoelectric offsets and the REF drive network.
For related devices, see HKEQGOO’s Instrumentation Amplifiers category.
Technical Specifications
| Parameter | Verified Information |
|---|---|
| Manufacturer | Texas Instruments |
| Exact MPN | INA828IDR |
| Offset Voltage | 50 µV maximum |
| Input Noise | 7 nV/√Hz |
| Bandwidth | 2 MHz at G=1; 260 kHz at G=100 |
| Gain Range | 1 V/V to 1000 V/V |
| Gain Drift | 5 ppm/°C at G=1; 50 ppm/°C at G>1 |
| Supply | 4.5 V to 36 V or ±2.25 V to ±18 V |
| Protection / CMRR | ±40 V input protection; 110 dB minimum CMRR at G=10 |
| Exact Package / Packing | SOIC (D), 8 pins; 2500-piece large tape and reel |
| Manufacturer Status | Active / Production |
| Part Marking | INA828 |
Functional Highlights
7 nV/√Hz noise supports low-level broadband acquisition
INA828 is a better choice than micropower zero-drift amplifiers when the sensor signal contains useful AC bandwidth and source impedance does not make current noise dominant.
PCB assembly effects matter at tens of microvolts
TI dedicates design guidance to board strain and assembly effects. Mechanical stress and thermoelectric junctions can become comparable to the amplifier offset when the circuit is built for microvolt-level accuracy.
Design Considerations
- Use low-thermal-EMF materials and symmetric input routing for microvolt-level signals.
- Select RG with suitable tolerance and temperature coefficient, especially above unity gain.
- Keep REF source impedance low so internal resistor matching is not disturbed.
Product Status and Exact Order Code
Manufacturer status: Active / Production
Texas Instruments lists INA828IDR as Active / Production; SOIC (D), 8 pins; 2500-piece large tape and reel; Level-2-260C-1 YEAR; −40°C to +125°C; marking INA828.
Related Engineering Resources
Quality & Verification Support
Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. After an order is placed, physical product, label, packaging, and Date Code photos may be provided where appropriate.
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