IR2110STRPBF SOIC 16W – Infineon Technologies

Gate driver with voltage class 500 V, VCC 10 V to 20 V, and source current 2.5 A.

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SKU: IR2110STRPBF Category: Tag: Brand:
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Key Selection Information

Selection Parameter Confirmed Information
Function High-side and low-side gate driver with shutdown
Voltage class 500 V
Source current 2.5 A
Sink current 2.5 A
VCC range 10 V to 20 V
Turn-on propagation delay 120 ns
Turn-off propagation delay 94 ns
Package SOIC 16W

Product Overview

The IR2110STRPBF is the exact active tape-and-reel OPN for Infineon’s IR2110S high-side/low-side gate driver. It uses a floating level-shift architecture for half-bridge power stages and provides significantly stronger peak drive than low-current drivers such as the IR2103S.

Infineon specifies 2.5 A source and 2.5 A sink capability, a 10 V to 20 V VCC range and a 500 V voltage class. The device also includes a shutdown function and separate high/low-side channels, making it suitable where larger MOSFET or IGBT gate charge requires fast charge/discharge current.

IR2110STRPBF product view

Technical Specifications

Parameter Confirmed Information
Channels 2
Configuration High-side and low-side
Voltage class 500 V
Source current 2.5 A
Sink current 2.5 A
VCC range 10 V to 20 V
Turn-on propagation delay 120 ns
Turn-off propagation delay 94 ns
VBS UVLO on / off 8.6 V / 8.2 V
VCC UVLO on / off 8.5 V / 8.2 V
Shutdown input Supported
Package SOIC 16W
Packing 1000 tape and reel
Product status Active

Design Considerations

The 2.5 A drive capability allows faster switching of larger gates, but external gate resistance still sets the real current and dv/dt. Choose gate resistance from switching-loss, EMI, overshoot and false-turn-on requirements rather than simply using the maximum available driver current.

The floating high-side channel normally relies on a bootstrap supply, so maximum high-side on time and bootstrap recharge must be checked. Negative switch-node transients should also remain inside the driver’s documented immunity limits to avoid level-shift malfunction.

Related Engineering Resources

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Package

SOIC 16W