Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Device type | High-speed switching/signal diode |
| Breakdown voltage | 100 V |
| Working peak reverse voltage | 75 V |
| Average rectified current | 200 mA at TA = 75°C |
| Reverse recovery | 5 ns maximum |
| Capacitance | 4 pF maximum at 0 V, 1 MHz |
| Package | Hermetic glass DO-35 |
| Family status | In Production |
Product Overview
The Microchip 1N914 is a hermetic glass axial switching diode for high-speed signal steering, blocking, detector and general switching functions. It combines a 75 V working reverse rating with low junction capacitance and a 5 ns maximum reverse-recovery specification.
The 200 mA current value is defined with thermal conditions and should not be interpreted as unrestricted current at any ambient temperature.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Breakdown voltage | 100 V |
| Working reverse voltage | 75 V |
| Average rectified current | 200 mA at TA = 75°C |
| Surge current | 2 A peak, 8.3 ms |
| VF max | 0.8 V at 10 mA |
| VF max | 1.2 V at 50 mA |
| Reverse recovery | 5 ns max at IF = IR = 10 mA |
| Capacitance | 4 pF max at 0 V, 1 MHz |
| Junction/storage temperature | -65°C to +175°C |
| Package | DO-35 axial glass |
Design Considerations
Use the cathode band for polarity during assembly and inspection. For repetitive signal switching, reverse-recovery and capacitance can be more important than forward-current rating.
Continuous current should be checked against forward-voltage loss and lead/ambient thermal conditions.
Related Engineering Resources
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Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. After an order is placed, physical product, label, packaging, and Date Code photos may be provided where appropriate.
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