Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Device type | Single N-channel power MOSFET |
| Technology | OptiMOS 6 |
| VDS maximum | 100 V |
| RDS(on) class | 2.7 mΩ product family |
| Switching focus | High-frequency power conversion |
| Junction temperature | Up to 175°C |
| Package | PG-TDSON-8 / SuperSO8 FL |
| Product status | Active |
Product Overview
The ISC027N10NM6ATMA1 is the exact active OPN for Infineon’s 100 V OptiMOS 6 industrial power MOSFET in the SuperSO8 FL package. It is optimized for high-frequency conversion in telecom/server supplies and other compact power stages where both conduction and switching losses need to be reduced.
The device belongs to the 2.7 mΩ resistance class and uses Infineon’s OptiMOS 6 technology with low and soft reverse-recovery behavior. This makes it materially different from a low-frequency MOSFET selected only for low static RDS(on), particularly in synchronous rectification where reverse-recovery charge and switching transition quality affect total loss and voltage overshoot.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Polarity | N-channel |
| VDS maximum | 100 V |
| Technology | OptiMOS 6 industrial MOSFET |
| RDS(on) class | 2.7 mΩ product family |
| Package | PG-TDSON-8 |
| Package name | SuperSO8 FL |
| Junction-temperature rating | 175°C |
| Mounting | Surface mount |
| Reverse-recovery design | Low and soft recovery |
| Target use | High-switching-frequency power conversion |
| Product status | Active |
Design Considerations
In a high-frequency synchronous stage, compare the exact gate charge, output capacitance and reverse-recovery curves at the real voltage/current point rather than choosing from RDS(on) alone. Lower conduction resistance can be offset by switching loss if the gate drive or dead time is not optimized.
The SuperSO8 FL mechanical platform is also different from a TOLL or standard SO-8 device. Use the exact Infineon land pattern, exposed thermal connection and copper recommendations when evaluating a footprint-level replacement.
Related Engineering Resources
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