Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Function | High-frequency half-bridge N-channel MOSFET driver |
| High-side voltage range | 100 V |
| VDD operating range | 9 V to 16 V |
| Peak high-side source current | 4 A at VDD = 16 V |
| Peak high-side sink current | 5.9 A at VDD = 16 V |
| Propagation delay | 20 ns typical |
| Channel delay matching | Less than 5 ns |
| Package | SOIC-8E |
Product Overview
The MP18024HN-LF-Z is an active MPS 100 V high-frequency half-bridge gate driver in SOIC-8E. The high-side and low-side channels are independently controlled, include UVLO protection, and are matched to less than 5 ns delay difference.
The -Z suffix is the reel-size option. MPS lists MP18024HN-LF-P, MP18024HN-LF-Z, and MP18024HN-LF as active orderable part numbers for the MP18024.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Driver topology | Half bridge |
| High-side voltage range | 100 V |
| VDD operating range | 9–16 V |
| VDD absolute maximum | 18 V |
| VDD UVLO rising threshold | 8.1–8.8 V |
| Low-side peak source current | 4.7 A at VDD = 16 V |
| Low-side peak sink current | 6 A at VDD = 16 V |
| High-side peak source current | 4 A at VDD = 16 V |
| High-side peak sink current | 5.9 A at VDD = 16 V |
| Propagation delay | 20 ns typical |
| Package | SOIC-8E |
Design Considerations
The integrated bootstrap diode reduces external component count, but the bootstrap capacitor still has to support the required high-side gate charge through the expected duty-cycle range. Place VDD and bootstrap bypass capacitors close to the driver pins.
The gate-current values are condition-dependent peak ratings. Gate resistance should be selected from the MOSFET gate charge, switching-loss target, ringing and EMI behavior rather than from the peak-current rating alone.
Related Engineering Resources
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