Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Device type | Single P-channel power MOSFET |
| VDS maximum | -12 V |
| ID maximum at 25°C | -4.3 A |
| RDS(on) maximum at -4.5 V | 50 mΩ |
| Typical gate charge | 10 nC |
| Typical VGS(th) | -0.55 V |
| Package | SOT-23 |
| Product status | Discontinued / End of Life |
Product Overview
The IRLML6401TRPBF is the exact tape-and-reel OPN for Infineon’s -12 V P-channel power MOSFET in SOT-23. The P-channel topology is convenient for compact high-side load switching because the gate can be pulled below the source to turn the device on without a boosted high-side driver.
Infineon specifies -4.3 A maximum drain current at 25°C and 50 mΩ maximum RDS(on) at a -4.5 V gate-source condition. Typical gate charge is 10 nC. The part is End of Life, so it remains relevant for legacy repair and exact-BOM sourcing but should be reviewed carefully before adoption in a new platform.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Polarity | P-channel |
| VDS maximum | -12 V |
| ID maximum at 25°C | -4.3 A |
| RDS(on) maximum at VGS = -4.5 V | 50 mΩ |
| Typical QG | 10 nC |
| Qgd | 2.6 nC |
| VGS(th) range | -0.4 V to -0.95 V |
| Typical VGS(th) | -0.55 V |
| VGS maximum magnitude | 8 V |
| Power dissipation at TA = 25°C | 1.3 W maximum |
| Package | SOT-23 |
| Packing | 3000 tape and reel |
| Product status | Discontinued / End of Life |
Design Considerations
A P-channel MOSFET simplifies high-side drive but generally carries higher resistance than an equivalent N-channel device. Use the actual load current and gate-source voltage to calculate conduction loss and verify the SOT-23 thermal path.
The -12 V drain rating leaves limited transient margin on nominal 12 V systems. If the source rail can overshoot or contain inductive spikes, check whether a higher-voltage P-channel replacement is required rather than using this device at the edge of its VDS limit.
Related Engineering Resources
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