Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Device type | Single N-channel power MOSFET |
| VDS maximum | 20 V |
| ID maximum at 25°C | 4.2 A |
| RDS(on) maximum at 4.5 V | 45 mΩ |
| Typical gate charge at 4.5 V | 8 nC |
| VGS(th) range | 0.6 V to 1.2 V |
| Package | SOT-23 |
| Product status | Discontinued / End of Life |
Product Overview
The IRLML2502TRPBF is the exact tape-and-reel OPN for Infineon’s 20 V N-channel power MOSFET in the SOT-23 package. It is a compact logic-level switching device intended for low-voltage loads, battery-powered circuits and small dc power stages.
Infineon specifies 4.2 A maximum drain current at 25°C and 45 mΩ maximum RDS(on) at 4.5 V gate drive. Typical total gate charge is only 8 nC, which reduces driver energy and can support relatively fast switching in small load-switch or converter applications. The exact OPN is now discontinued, so lifecycle must be considered for new designs.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Polarity | N-channel |
| VDS maximum | 20 V |
| ID maximum at 25°C | 4.2 A |
| RDS(on) maximum at VGS = 4.5 V | 45 mΩ |
| Typical QG at 4.5 V | 8 nC |
| Qgd | 1.7 nC |
| VGS(th) range | 0.6 V to 1.2 V |
| Typical VGS(th) | 0.9 V |
| VGS maximum | 12 V |
| Power dissipation at TA = 25°C | 1.3 W maximum |
| Operating temperature | -55°C to +150°C |
| Package | SOT-23 |
| Packing | 3000 tape and reel |
| Product status | Discontinued / End of Life |
Design Considerations
The 4.2 A figure is a device maximum under thermal conditions that a small SOT-23 PCB footprint may not sustain continuously. Calculate conduction loss from actual RDS(on), current and board thermal resistance, especially when the duty cycle is high.
The device is logic-level relative to older power MOSFETs, but its published RDS(on) condition is 4.5 V gate drive. A 1.8 V or 2.5 V logic signal should not be assumed to achieve the same resistance without checking the transfer curves.
Related Engineering Resources
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