Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Manufacturer | Infineon Technologies |
| Exact MPN | IRF640NPBF |
| Product Category | MOSFETs |
| Package | TO-220AB |
| Packing | 50 pcs/tube |
| Configuration | 1 N-channel |
| Drain-Source Voltage (VDSS) | 200V |
| Continuous Drain Current (ID) | 18A |
| On-Resistance (RDS(on)) | 150mΩ@10V |
Product Overview
200 V single N-channel HEXFET® power MOSFET; exact MPN verified.
The higher voltage rating provides substantially more blocking margin than low-voltage MOSFETs, but the 150 mΩ R_{DS(on)} makes conduction loss significant at high current. The relatively long diode recovery time matters in hard-switched commutation.
Technical Specifications
| Parameter | Verified Information |
|---|---|
| Manufacturer | Infineon Technologies |
| Exact MPN | IRF640NPBF |
| Functional Category | MOSFETs |
| Package | TO-220AB |
| Packing | 50 pcs/tube |
| Source Catalog ID | C2568 |
| Configuration | 1 N-channel |
| Drain-Source Voltage (VDSS) | 200V |
| Continuous Drain Current (ID) | 18A |
| On-Resistance (RDS(on)) | 150mΩ@10V |
| Manufacturer Status | Active. |
Selection Notes
200 V blocking capability; relatively high 150 mΩ conduction resistance; TO-220 thermal path; body-diode recovery; avalanche/transient robustness.
Check VDSS margin, continuous/pulsed current, RDS(on) at the actual gate drive and package thermal impedance together.
Manufacturer Decision-Relevant Notes
V_{DS}: 200 V. ; R_{DS(on)}: max. 0.15 Ω at V_{GS}=10 V, I_D=11 A. ; Continuous I_D: max. 18 A at T_C=25^°C; 13 A at T_C=100^°C. ; Pulsed I_D: max. 72 A. ; Gate-source voltage: ±20 V. ; Single-pulse avalanche energy: 247 mJ. ; Body-diode V_{SD}: max. 1.3 V at T_J=25^°C, I_S=11 A. ; t_{rr}: typ. 167 ns, max. 251 ns at T_J=25^°C, I_F=11 A. ; Operating/storage temperature: -55 to +175^°C.
Design Considerations
-
- Verify worst-case V_{DS}, including ringing, stays below 200 V. 2. Calculate conduction and thermal loss at the actual current and junction temperature. 3. Check body-diode reverse-recovery current and Q_{rr} in the intended switching topology. 4. Confirm the TO-220 heatsink and case-to-sink interface support the required dissipation.
Application Fit
DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.
Exact Variant and Procurement Notes
TO-220AB through-hole package; exact IRF640NPBF; tube packing, 50 units in the datasheet package table. Do not confuse it with IRF640NSPbF (D²PAK) or IRF640NLPbF (TO-262).
Manufacturer Resources
Quality & Verification Support
Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. Physical product, label, packaging, and Date Code photos may be provided where appropriate.
Request a Quote
For IRF640NPBF quotation, provide the exact MPN, required quantity, destination, target Date Code if applicable, and any inspection or testing requirements.
