Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Manufacturer | onsemi |
| Exact MPN | MMBFJ309LT1G |
| Product Category | JFETs |
| Package | SOT-23 |
| Packing | 3,000 pcs/reel |
| Configuration | 1 N-channel |
| Power Dissipation (PD) | 225mW |
| Zero-Gate Drain Current (IDSS) | 30mA |
| Operating Temperature | -55℃ to +150℃ |
Product Overview
MMBFJ309LT1G is a onsemi device in the JFETs category, supplied in a SOT-23 package.
Verified selection data includes Configuration: 1 N-channel, Power Dissipation (PD): 225mW, Zero-Gate Drain Current (IDSS): 30mA, Operating Temperature: -55℃ to +150℃.
Its lower I_{DSS} range suits lower-current RF bias than MMBFJ310, but the -1 to -4 V cutoff spread must be included in bias design.
Technical Specifications
| Parameter | Verified Information |
|---|---|
| Manufacturer | onsemi |
| Exact MPN | MMBFJ309LT1G |
| Functional Category | JFETs |
| Package | SOT-23 |
| Packing | 3,000 pcs/reel |
| Source Catalog ID | C58012 |
| Configuration | 1 N-channel |
| Power Dissipation (PD) | 225mW |
| Zero-Gate Drain Current (IDSS) | 30mA |
| Operating Temperature | -55℃ to +150℃ |
| Manufacturer Status | Active. |
Selection Notes
Lower-current versus MMBFJ310; RF frequency; cutoff voltage; capacitance; noise figure; qualification suffix.
Match channel polarity, VGS(off), breakdown voltage, current range and dissipation to the analog switch or bias point.
Manufacturer Decision-Relevant Notes
V_{DS}, V_{GS} max 25 V; gate current max 10 mA; I_{DSS} min 12 mA, max 30 mA at V_{DS}=10 V, V_{GS}=0; V_{GS(off)} min -1.0 V, max -4.0 V; |Y_{fs}| 8–18 mmhos; C_{iss} max 5 pF; C_{rss} max 2.5 pF; noise figure typ 3 dB at 450 MHz under the datasheet test condition.
Design Considerations
- Verify matching and stability at the actual frequency; validate noise figure at the actual source impedance; check 25 V terminal ratings; include 5 pF input and 2.5 pF reverse-transfer capacitance.
Application Fit
VHF/UHF amplifiers, oscillators, and mixers.
Exact Variant and Procurement Notes
SOT-23, Pb-free, 3,000/tape-and-reel; standard MPN, distinct from SMMBFJ309LT1G automotive variant.
Manufacturer Resources
Quality & Verification Support
Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. Physical product, label, packaging, and Date Code photos may be provided where appropriate.
Request a Quote
For MMBFJ309LT1G quotation, provide the exact MPN, required quantity, destination, target Date Code if applicable, and any inspection or testing requirements.
For an onsemi RF JFET with a higher specified drain-current range, compare MMBFJ310LT1G: its zero-gate drain current is 24–60 mA and gate-source cutoff range is −2 to −6.5 V, versus 12–30 mA and −1 to −4 V for MMBFJ309LT1G. Check RF bias conditions and do not assume these variants are direct replacements.
