Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Device type | N-channel JFET |
| Automotive qualification | AEC-Q101 qualified, PPAP capable |
| Drain-source voltage | 25 V maximum magnitude class |
| Gate-drain voltage | −25 V |
| Drain current | 20 mA to 40 mA characteristic class |
| Forward transfer admittance | 40 mS class |
| Maximum drain current rating | 50 mA |
| Package | CPH3 |
| Packing | 3000-piece tape and reel |
Product Overview
NSVJ3910SB3T1G is an automotive-qualified onsemi N-channel JFET optimized for compact low-noise amplification. The device combines a 20 mA to 40 mA drain-current class with approximately 40 mS forward transfer admittance and low input capacitance.
The NSV prefix identifies onsemi’s automotive/controlled-change flow, and the part is AEC-Q101 qualified and PPAP capable.
Technical Specifications
| Parameter | Confirmed Information |
|---|---|
| Channel | N-channel JFET |
| VDSX rating | 25 V |
| VGDS rating | −25 V |
| Maximum gate current | 10 mA |
| Maximum drain current | 50 mA |
| Power dissipation | 400 mW class |
| Junction/storage range | −55°C to +150°C |
| Package | CPH3 |
| Qualification | AEC-Q101 / PPAP capable |
RF Front-End Considerations
The JFET is intended for low-noise gain stages such as automotive AM-radio front ends. Bias point, source degeneration and device spread should be evaluated using the transfer characteristics rather than selecting only from the maximum drain-current rating.
Manufacturer Resource
Quality & Verification Support
Exact NSV automotive prefix, T1G reel suffix, CPH3 package and lot/date information can be reviewed before shipment.
Request a Quote
Request NSVJ3910SB3T1G exactly and include quantity, PPAP/traceability and date-code requirements.
