Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Manufacturer | onsemi |
| Exact MPN | MMBFJ310LT1G |
| Product Category | JFETs |
| Package | SOT-23 |
| Packing | 3,000 pcs/reel |
| Configuration | 1 N-channel |
| Gate-Source Cutoff Voltage (VGS(off)) | 6.5V |
| Gate-Source Breakdown Voltage (VGSS) | 25V |
| Power Dissipation (PD) | 225mW |
Product Overview
MMBFJ310LT1G is a onsemi device in the JFETs category, supplied in a SOT-23 package.
Verified selection data includes Configuration: 1 N-channel, Gate-Source Cutoff Voltage (VGS(off)): 6.5V, Gate-Source Breakdown Voltage (VGSS): 25V, Power Dissipation (PD): 225mW.
Low specified capacitance and 3 dB typical 450 MHz noise figure support RF front ends, but the noise figure is typical and condition-specific, not a guaranteed broadband limit.
Technical Specifications
| Parameter | Verified Information |
|---|---|
| Manufacturer | onsemi |
| Exact MPN | MMBFJ310LT1G |
| Functional Category | JFETs |
| Package | SOT-23 |
| Packing | 3,000 pcs/reel |
| Source Catalog ID | C33416 |
| Configuration | 1 N-channel |
| Gate-Source Cutoff Voltage (VGS(off)) | 6.5V |
| Gate-Source Breakdown Voltage (VGSS) | 25V |
| Power Dissipation (PD) | 225mW |
| Manufacturer Status | Active. |
Selection Notes
RF frequency; I_{DSS}; cutoff voltage; capacitance; noise figure; standard versus automotive S-prefix.
Match channel polarity, VGS(off), breakdown voltage, current range and dissipation to the analog switch or bias point.
Manufacturer Decision-Relevant Notes
V_{DS}, V_{GS} max 25 V; gate current max 10 mA; I_{DSS} min 24 mA, max 60 mA at V_{DS}=10 V, V_{GS}=0; V_{GS(off)} min -2.0 V, max -6.5 V; |Y_{fs}| 8–18 mmhos at 1 kHz; C_{iss} max 5 pF; C_{rss} max 2.5 pF; noise figure typ 3 dB at 450 MHz, V_{DS}=10 V, I_D=10 mA.
Design Considerations
- Verify RF stability and matching at the intended frequency; bias at the datasheet V_{DS}=10 V/I_D=10 mA test point before extrapolating noise; include -2.0 to -6.5 V cutoff spread; check 25 V terminal limits.
Application Fit
VHF/UHF amplifiers, oscillators, and mixers; the datasheet cites common-gate gains of 16 dB at 100 MHz and 12 dB at 450 MHz.
Exact Variant and Procurement Notes
SOT-23, Pb-free; exact standard MPN is listed with 3,000/tape-and-reel. The SMMBFJ310LT1G is the automotive-qualified variant.
Manufacturer Resources
Quality & Verification Support
Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. Physical product, label, packaging, and Date Code photos may be provided where appropriate.
Request a Quote
For MMBFJ310LT1G quotation, provide the exact MPN, required quantity, destination, target Date Code if applicable, and any inspection or testing requirements.
For a lower-current RF JFET selection, compare onsemi MMBFJ309LT1G: its specified zero-gate drain current is 12–30 mA and gate-source cutoff range is −1 to −4 V, versus 24–60 mA and −2 to −6.5 V for MMBFJ310LT1G. These datasheet differences require bias verification; no direct interchangeability is implied.
