Key Selection Information
| Selection Parameter | Confirmed Information |
|---|---|
| Rating | AEC-Q100 automotive; −40°C to +125°C ambient orderable range |
| Drive Strength | ±10 A peak source/sink; split outputs |
| Isolation | 5.7 kVRMS reinforced; 1.5 kVRMS working voltage family spec |
| CMTI | 150 V/ns minimum |
| Protection | 200 ns fast DESAT, 4 A active Miller clamp, 400 mA soft turn-off |
| Sensing / Status | Isolated analog-to-PWM sensor, FLT, RDY and RST/EN |
| Output Drive | Up to 33 V VDD−VEE; 12 V UVLO |
| Exact Package / Packing | SOIC (DW), 16 pins; 2000-piece large tape and reel |
Product Overview
UCC21750QDWRQ1 is the automotive orderable version of TI’s UCC21750-Q1 smart single-channel isolated gate driver for high-voltage SiC MOSFET and IGBT power stages. It combines ±10 A gate drive with DESAT fault detection, soft turn-off and an internal active Miller clamp.
The isolated analog-to-PWM channel is a major differentiator from simpler gate drivers: it can carry temperature or high-voltage sensing information across the barrier without adding a separate analog isolator. That can reduce isolation-channel count in traction, charger or inverter modules.
TI’s current part-detail information lists this exact QDWRQ1 order code as active automotive grade in SOIC-16 DW, 2000-piece large tape-and-reel packaging. The -Q1 identity should be retained because it carries the automotive qualification context.
For related devices, see HKEQGOO’s Isolators – Gate Drivers category.
Technical Specifications
| Parameter | Verified Information |
|---|---|
| Manufacturer | Texas Instruments |
| Exact MPN | UCC21750QDWRQ1 |
| Rating | AEC-Q100 automotive; −40°C to +125°C ambient orderable range |
| Drive Strength | ±10 A peak source/sink; split outputs |
| Isolation | 5.7 kVRMS reinforced; 1.5 kVRMS working voltage family spec |
| CMTI | 150 V/ns minimum |
| Protection | 200 ns fast DESAT, 4 A active Miller clamp, 400 mA soft turn-off |
| Sensing / Status | Isolated analog-to-PWM sensor, FLT, RDY and RST/EN |
| Output Drive | Up to 33 V VDD−VEE; 12 V UVLO |
| Exact Package / Packing | SOIC (DW), 16 pins; 2000-piece large tape and reel |
| Manufacturer Status | Active / Production |
| Part Marking | UCC21750-Q1 family marking per TI package data |
Functional Highlights
DESAT plus soft turn-off targets destructive short-circuit events
Fast fault detection is only effective when DESAT blanking, diode network and soft-turn-off behavior are designed around the actual SiC/IGBT module. Too little blanking can nuisance-trip; too much increases short-circuit energy.
Analog PWM sensing can simplify isolated thermal/voltage monitoring
The AIN/APWM path can encode NTC/PTC/diode temperature or high-voltage information across the same isolation barrier, but its bandwidth/accuracy should be matched to protection/telemetry needs rather than treated as a precision ADC replacement.
Design Considerations
- Design DESAT threshold and blanking components from the selected power switch’s saturation/short-circuit behavior.
- Keep gate loop, Miller-clamp path and VDD/VEE bypassing extremely compact to exploit ±10 A drive safely.
- Use creepage/clearance and isolation working-voltage rules for the complete PCB, not only the IC barrier rating.
Product Status and Exact Order Code
Manufacturer status: Active / Production
Texas Instruments lists UCC21750QDWRQ1 as Active automotive orderable part; SOIC (DW), 16 pins; 2000-piece large tape and reel; Level-3-260C-168 HR; −40°C to +125°C ambient; UCC21750-Q1 family.
Related Engineering Resources
Quality & Verification Support
Third-party inspection or testing can be arranged according to customer requirements. Testing fees are borne by the buyer. Additional verification requirements can be discussed before shipment. After an order is placed, physical product, label, packaging, and Date Code photos may be provided where appropriate.
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